The state-of-the-art of planar optical amplifier, with particular emphasis to the work of research group of the Politecnico di Bari is reported. The first two examples pertain to high gain planar waveguide amplifiers, made by erbium doped and erbium-ytterbium co-doped, silica-titania SiO/sub 2/-TiO/sub 2/ thin films on silica SiO/sub 2/ glass substrate. The third example refers to a planar channel waveguide amplifier made of praseodymium (Pr/sup 3+/) doped GeS/sub 2/ chalcogenide glass. The last is an all-optical amplifier constituted by a periodically poled lithium niobate (PPLN) channel waveguide
Optical Amplification for Communication Systems / D'Orazio, Antonella; De Sario, M.; Mescia, Luciano; Petruzzelli, Vincenzo; Prudenzano, Francesco. - (2002), pp. 119-125. (Intervento presentato al convegno 4th International Conference on Transparent Optical Networks, ICTON 2002 tenutosi a Warsaw, Poland nel April 21-25, 2002) [10.1109/ICTON.2002.1009526].
Optical Amplification for Communication Systems
D'ORAZIO, Antonella;MESCIA, Luciano;PETRUZZELLI, Vincenzo;PRUDENZANO, Francesco
2002-01-01
Abstract
The state-of-the-art of planar optical amplifier, with particular emphasis to the work of research group of the Politecnico di Bari is reported. The first two examples pertain to high gain planar waveguide amplifiers, made by erbium doped and erbium-ytterbium co-doped, silica-titania SiO/sub 2/-TiO/sub 2/ thin films on silica SiO/sub 2/ glass substrate. The third example refers to a planar channel waveguide amplifier made of praseodymium (Pr/sup 3+/) doped GeS/sub 2/ chalcogenide glass. The last is an all-optical amplifier constituted by a periodically poled lithium niobate (PPLN) channel waveguideI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
