In this paper, we review a procedure to study the effects of temperature in the design of A/D circuits based on CNTFETs. At first, we briefly describe a compact model, already proposed by us, in which the temperature variation in the drain current equation and in energy band gap is considered. Then, the effects of temperature variations in the design of analog circuits, such as a cascode current sink mirror and an Operational Transconductance Amplifier (OTA), and in the design of digital circuits including in particular NAND and NOR logic gates, are illustrated and widely discussed.
A Review on the Study of Temperature Effects in the Design of A/D Circuits based on CNTFET / Marani, Roberto; Perri, Anna Gina. - In: CURRENT NANOSCIENCE. - ISSN 1573-4137. - STAMPA. - 15:5(2019), pp. 471-480. [10.2174/1573413714666181009125058]
A Review on the Study of Temperature Effects in the Design of A/D Circuits based on CNTFET
Roberto MaraniSoftware
;Anna Gina Perri
Conceptualization
2019-01-01
Abstract
In this paper, we review a procedure to study the effects of temperature in the design of A/D circuits based on CNTFETs. At first, we briefly describe a compact model, already proposed by us, in which the temperature variation in the drain current equation and in energy band gap is considered. Then, the effects of temperature variations in the design of analog circuits, such as a cascode current sink mirror and an Operational Transconductance Amplifier (OTA), and in the design of digital circuits including in particular NAND and NOR logic gates, are illustrated and widely discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.