Deep submicron CMOS technologies nowadays open several interesting perspectives for analog applications in the field of High Energy Physics (HEP) at hadrons colliders like LHC. However, the exposure to ionizing radiation, typical of HEP applications, influences the static characteristics and the noise performances of deep-submicron MOS transistors employed in detector front-end circuits. The results of characterization measurements before and after protons irradiation carried out on CMOS devices with different form factors (W/L ratio), from a 0.13 mu m commercial process at two different dose values, will be presented.
Measurements of noise and static parameters of CMOS devices after 3 MeV proton irradiation up to 120 Mrad / Cramarossa, G.; Robertis, D. E.; Loddo, F.; Marzocca, C.; Ranieri, A.; Carraresi, L.; Mirto, F. A.. - STAMPA. - (2007), pp. 586-590. (Intervento presentato al convegno 10th International Conference on Advanced Technology and Particle Physics, ICATPP 2007 tenutosi a Como, Italy nel October 08-12, 2007) [10.1142/9789812819093_0101].
Measurements of noise and static parameters of CMOS devices after 3 MeV proton irradiation up to 120 Mrad
Marzocca, C.;
2007-01-01
Abstract
Deep submicron CMOS technologies nowadays open several interesting perspectives for analog applications in the field of High Energy Physics (HEP) at hadrons colliders like LHC. However, the exposure to ionizing radiation, typical of HEP applications, influences the static characteristics and the noise performances of deep-submicron MOS transistors employed in detector front-end circuits. The results of characterization measurements before and after protons irradiation carried out on CMOS devices with different form factors (W/L ratio), from a 0.13 mu m commercial process at two different dose values, will be presented.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
