We study pattern formation in a paraxial model for an unidirectional ring resonator filled with a semiconductor sample and driven by a coherent injected field beyond the mean field limit (MFL). We perform numerical simulations to describe the three-dimensional dynamics of the coherent field profile. For fast media spontaneous self-confinement leads to the formation of 313 dissipative addressable spatial solitons, we show that for carrier dynamics compatible with GaAs/GaAlAs MQW devices longitudinal self-confinement is hindered by the slow carrier interband dynamics.
Three-dimensional pattern formation in semiconductor microcavities / Brambilla, M.; Maggipinto, T.; Columbo, L.; Perrini, I. M.. - STAMPA. - 6725:(2007). (Intervento presentato al convegno The International Conference on Coherent And Nonlinear Optics, ICONO 2007 tenutosi a Minsk, Belarus nel 28/5 - 1/6 2007) [10.1117/12.750081].
Three-dimensional pattern formation in semiconductor microcavities
M. Brambilla;
2007-01-01
Abstract
We study pattern formation in a paraxial model for an unidirectional ring resonator filled with a semiconductor sample and driven by a coherent injected field beyond the mean field limit (MFL). We perform numerical simulations to describe the three-dimensional dynamics of the coherent field profile. For fast media spontaneous self-confinement leads to the formation of 313 dissipative addressable spatial solitons, we show that for carrier dynamics compatible with GaAs/GaAlAs MQW devices longitudinal self-confinement is hindered by the slow carrier interband dynamics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
