We study pattern formation in a paraxial model for an unidirectional ring resonator filled with a semiconductor sample and driven by a coherent injected field beyond the mean field limit (MFL). We perform numerical simulations to describe the three-dimensional dynamics of the coherent field profile. For fast media spontaneous self-confinement leads to the formation of 313 dissipative addressable spatial solitons, we show that for carrier dynamics compatible with GaAs/GaAlAs MQW devices longitudinal self-confinement is hindered by the slow carrier interband dynamics.

Three-dimensional pattern formation in semiconductor microcavities

M. Brambilla;
2007

Abstract

We study pattern formation in a paraxial model for an unidirectional ring resonator filled with a semiconductor sample and driven by a coherent injected field beyond the mean field limit (MFL). We perform numerical simulations to describe the three-dimensional dynamics of the coherent field profile. For fast media spontaneous self-confinement leads to the formation of 313 dissipative addressable spatial solitons, we show that for carrier dynamics compatible with GaAs/GaAlAs MQW devices longitudinal self-confinement is hindered by the slow carrier interband dynamics.
The International Conference on Coherent And Nonlinear Optics, ICONO 2007
978-0-8194-6882-6
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11589/17859
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