The aim of this paper is to simulate the behavior of Carbon NanoTube Field Effect Transistors (CNTFETs) operating in sub-threshold region for ultra-low power applications. In particular we propose the design of a SRAM cell based on CNTFET, in which we use a CNTFET model, already proposed by us. Then, for comparison purposes, the same design procedure is applied to characterize a SRAM cell based on CMOS technology, in which we use the BSIM4 model of the ADS library. In particular the MOSFET parameters are tuned by us through parametric simulations to obtain performance of the MOSFET model comparable to the CNTFET one.

Design of CNTFETs Operating in High Speed Sub-Threshold Condition for Ultra-Low Power Applications / Marani, Roberto; Perri, Anna Gina. - In: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. - ISSN 2162-8777. - ELETTRONICO. - 8:10(2019), pp. 93-101. [10.1149/2.0201910jss]

Design of CNTFETs Operating in High Speed Sub-Threshold Condition for Ultra-Low Power Applications

Roberto Marani
Software
;
Anna Gina Perri
Conceptualization
2019-01-01

Abstract

The aim of this paper is to simulate the behavior of Carbon NanoTube Field Effect Transistors (CNTFETs) operating in sub-threshold region for ultra-low power applications. In particular we propose the design of a SRAM cell based on CNTFET, in which we use a CNTFET model, already proposed by us. Then, for comparison purposes, the same design procedure is applied to characterize a SRAM cell based on CMOS technology, in which we use the BSIM4 model of the ADS library. In particular the MOSFET parameters are tuned by us through parametric simulations to obtain performance of the MOSFET model comparable to the CNTFET one.
2019
Design of CNTFETs Operating in High Speed Sub-Threshold Condition for Ultra-Low Power Applications / Marani, Roberto; Perri, Anna Gina. - In: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. - ISSN 2162-8777. - ELETTRONICO. - 8:10(2019), pp. 93-101. [10.1149/2.0201910jss]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/183775
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