A study of facet degradation of InGaAs quantum well lasers is reported. We tune up a Raman and photoluminescence micro-probe technique for determining the crystal structure and the temperature profile of the cladding layer, in steps of approximately 1 micrometer, with a temperature resolution better than 1 degree Kelvin. The cladding layer composition and cross- section temperature profile have been monitored during operation. A clear correlation between the facet degradation and the type of protective coating is found.

Quantum-well-laser mirror degradation investigated by microprobe optical spectroscopy / Corvasce, C.; Spagnolo, Vincenzo Luigi; Scamarcio, Gaetano; Lugara, M.; Adduci, F.; Ferrara, Michele; Sibilano, Michele; Pellegrino, Sergio; del Giudice, Massimo; Re, M. G.. - STAMPA. - 2648:(1995), pp. 360-364. (Intervento presentato al convegno International Conference on Optical Diagnostics of Materials and Devices for Optoelectronics, Microelectronics and Quantum Electronics tenutosi a Kiev, Ukraine nel May 11-13, 1995) [10.1117/12.226195].

Quantum-well-laser mirror degradation investigated by microprobe optical spectroscopy

Vincenzo Spagnolo;
1995-01-01

Abstract

A study of facet degradation of InGaAs quantum well lasers is reported. We tune up a Raman and photoluminescence micro-probe technique for determining the crystal structure and the temperature profile of the cladding layer, in steps of approximately 1 micrometer, with a temperature resolution better than 1 degree Kelvin. The cladding layer composition and cross- section temperature profile have been monitored during operation. A clear correlation between the facet degradation and the type of protective coating is found.
1995
International Conference on Optical Diagnostics of Materials and Devices for Optoelectronics, Microelectronics and Quantum Electronics
0-8194-2021-2
Quantum-well-laser mirror degradation investigated by microprobe optical spectroscopy / Corvasce, C.; Spagnolo, Vincenzo Luigi; Scamarcio, Gaetano; Lugara, M.; Adduci, F.; Ferrara, Michele; Sibilano, Michele; Pellegrino, Sergio; del Giudice, Massimo; Re, M. G.. - STAMPA. - 2648:(1995), pp. 360-364. (Intervento presentato al convegno International Conference on Optical Diagnostics of Materials and Devices for Optoelectronics, Microelectronics and Quantum Electronics tenutosi a Kiev, Ukraine nel May 11-13, 1995) [10.1117/12.226195].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/18400
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