A novel miniaturised high sensitivity Electric-field sensor based on a whispering gallery mode disk resonator is presented This device joins the potentials of silicon-on-insulator (SOI) technology with the potentials of high Q-factor disk resonator.
Modeling and Simulation of a High Sensitivity E-Field Sensor based on Disk Resonator and MOS Structure in SOI Technology / Passaro, V. M. N.; De Leonardis, F.. - STAMPA. - (2005), pp. 105-106. (Intervento presentato al convegno 5th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD '05. tenutosi a Berlin; Germany nel September 19-22, 2005) [10.1109/NUSOD.2005.1518157].
Modeling and Simulation of a High Sensitivity E-Field Sensor based on Disk Resonator and MOS Structure in SOI Technology
Passaro, V. M. N.;De Leonardis, F.
2005-01-01
Abstract
A novel miniaturised high sensitivity Electric-field sensor based on a whispering gallery mode disk resonator is presented This device joins the potentials of silicon-on-insulator (SOI) technology with the potentials of high Q-factor disk resonator.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
