In this paper a comparative analysis of GaAs, CdTe and CdZnTe radiation detectors has been performed. The study is carried out adopting a 3D FEM model which takes into account the carrier trapping and generation phenomena by the Shockley Read Hall recombination theory. The evaluated performance is in good accordance with the known experimental values. This confirms the general validity of the adopted model in simulating devices of any material and at any working temperature.
|Autori interni:||RIZZI, Maria|
|Titolo:||Comparative Analysis of GaAs, CdTe and CdZnTe Radiation Detectors|
|Rivista:||WSEAS TRANSACTIONS ON ELECTRONICS|
|Data di pubblicazione:||2006|
|Appare nelle tipologie:||1.1 Articolo in rivista|