A DC model of Carbon Nanotube Field Effect Transistors (CNTFETs) for CAD applications is proposed. The main objective is to obtain a very good agreement between measured and simulated I-V curves through a best-fitting procedure, particularly in the knee and saturation regions. To verify the accuracy of the model, the results have been compared with those of experimental data and of a numerical model online available, obtaining a negligible relative error in both cases. The proposed model can be easily implemented in an electrical simulator and the computational time is very short.

A DC Model of Carbon Nanotube Field Effect Transistor for CAD Applications / Marani, R.; Perri, Anna Gina. - In: INTERNATIONAL JOURNAL OF ELECTRONICS. - ISSN 0020-7217. - 99:3(2012), pp. 437-444. [10.1080/00207217.2011.629223]

A DC Model of Carbon Nanotube Field Effect Transistor for CAD Applications

PERRI, Anna Gina
2012-01-01

Abstract

A DC model of Carbon Nanotube Field Effect Transistors (CNTFETs) for CAD applications is proposed. The main objective is to obtain a very good agreement between measured and simulated I-V curves through a best-fitting procedure, particularly in the knee and saturation regions. To verify the accuracy of the model, the results have been compared with those of experimental data and of a numerical model online available, obtaining a negligible relative error in both cases. The proposed model can be easily implemented in an electrical simulator and the computational time is very short.
2012
A DC Model of Carbon Nanotube Field Effect Transistor for CAD Applications / Marani, R.; Perri, Anna Gina. - In: INTERNATIONAL JOURNAL OF ELECTRONICS. - ISSN 0020-7217. - 99:3(2012), pp. 437-444. [10.1080/00207217.2011.629223]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/1923
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