A DC model of Carbon Nanotube Field Effect Transistors (CNTFETs) for CAD applications is proposed. The main objective is to obtain a very good agreement between measured and simulated I-V curves through a best-fitting procedure, particularly in the knee and saturation regions. To verify the accuracy of the model, the results have been compared with those of experimental data and of a numerical model online available, obtaining a negligible relative error in both cases. The proposed model can be easily implemented in an electrical simulator and the computational time is very short.
Autori: | |
Titolo: | A DC Model of Carbon Nanotube Field Effect Transistor for CAD Applications |
Rivista: | |
Data di pubblicazione: | 2012 |
Digital Object Identifier (DOI): | 10.1080/00207217.2011.629223 |
Handle: | http://hdl.handle.net/11589/1923 |
Appare nelle tipologie: | 1.1 Articolo in rivista |
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