A DC model of Carbon Nanotube Field Effect Transistors (CNTFETs) for CAD applications is proposed. The main objective is to obtain a very good agreement between measured and simulated I-V curves through a best-fitting procedure, particularly in the knee and saturation regions. To verify the accuracy of the model, the results have been compared with those of experimental data and of a numerical model online available, obtaining a negligible relative error in both cases. The proposed model can be easily implemented in an electrical simulator and the computational time is very short.
|Titolo:||A DC Model of Carbon Nanotube Field Effect Transistor for CAD Applications|
|Data di pubblicazione:||2012|
|Digital Object Identifier (DOI):||10.1080/00207217.2011.629223|
|Appare nelle tipologie:||1.1 Articolo in rivista|