A DC model of Carbon Nanotube Field Effect Transistors (CNTFETs) for CAD applications is proposed. The main objective is to obtain a very good agreement between measured and simulated I-V curves through a best-fitting procedure, particularly in the knee and saturation regions. To verify the accuracy of the model, the results have been compared with those of experimental data and of a numerical model online available, obtaining a negligible relative error in both cases. The proposed model can be easily implemented in an electrical simulator and the computational time is very short.
A DC Model of Carbon Nanotube Field Effect Transistor for CAD Applications / Marani, R.; Perri, Anna Gina. - In: INTERNATIONAL JOURNAL OF ELECTRONICS. - ISSN 0020-7217. - 99:3(2012), pp. 437-444. [10.1080/00207217.2011.629223]
A DC Model of Carbon Nanotube Field Effect Transistor for CAD Applications
PERRI, Anna Gina
2012-01-01
Abstract
A DC model of Carbon Nanotube Field Effect Transistors (CNTFETs) for CAD applications is proposed. The main objective is to obtain a very good agreement between measured and simulated I-V curves through a best-fitting procedure, particularly in the knee and saturation regions. To verify the accuracy of the model, the results have been compared with those of experimental data and of a numerical model online available, obtaining a negligible relative error in both cases. The proposed model can be easily implemented in an electrical simulator and the computational time is very short.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
