A testing method for the detection of performance degradation induced by high-dose irradiation in high-energy experiments has been developed. This method was successfully applied for testing the analogue CMOS front-end of a silicon pixel detector. The major effects of radiation induced faults have been investigated with respect to the special layout used for the nMOS transistors.
Dynamic testing for radiation induced failures in a standard CMOS submicron technology pixel front-end / De Venuto, D.; Corsi, S.; Ohletz, M. J.. - STAMPA. - (1999), pp. 346-352. (Intervento presentato al convegno 5th European Conference on Radiation and Its Effects on Components and Systems, RADECS 99 tenutosi a Fontevraud, France nel September 13-17, 1999) [10.1109/RADECS.1999.858606].
Dynamic testing for radiation induced failures in a standard CMOS submicron technology pixel front-end
D. De Venuto;
1999-01-01
Abstract
A testing method for the detection of performance degradation induced by high-dose irradiation in high-energy experiments has been developed. This method was successfully applied for testing the analogue CMOS front-end of a silicon pixel detector. The major effects of radiation induced faults have been investigated with respect to the special layout used for the nMOS transistors.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
