We present a comparative analysis of Carbon Nanotube Field Effect Transistors (CNTFETs) and MOSFET devices, through the design of an amplifier both in source and drain common configuration. In particular the CNTFET used is a C-CNTFET and the MOSFET is in 32 nm technology, in order to have comparable results. We show how the use of CNTFETs improves the performance of proposed circuits with regards to the pass band, gain and output resistance. All simulation results are performed in Verilog-A, avoiding so the problems presented in SPICE used in previous designs, proposed in literature.
Analysis of CNTFET and MOSFET performance through the design of amplifiers in source and drain common configuration / Marani, Roberto; Perri, Anna Gina. - In: INTERNATIONAL JOURNAL OF RESEARCH AND REVIEWS IN APPLIED SCIENCES. - ISSN 2076-734X. - STAMPA. - 44:(2020).
Analysis of CNTFET and MOSFET performance through the design of amplifiers in source and drain common configuration
Roberto MaraniSoftware
;Anna Gina Perri
Conceptualization
2020-01-01
Abstract
We present a comparative analysis of Carbon Nanotube Field Effect Transistors (CNTFETs) and MOSFET devices, through the design of an amplifier both in source and drain common configuration. In particular the CNTFET used is a C-CNTFET and the MOSFET is in 32 nm technology, in order to have comparable results. We show how the use of CNTFETs improves the performance of proposed circuits with regards to the pass band, gain and output resistance. All simulation results are performed in Verilog-A, avoiding so the problems presented in SPICE used in previous designs, proposed in literature.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.