The microwave plasma enhanced chemical vapor deposition technique has been employed to grow polycrystalline diamond films on p-doped Si (100) substrates starting from highly diluted (1% CH4 in H2) gas mixtures. Coplanar interdigitated Cr/Au contacts have been thermally evaporated on two samples about 8 mum thick having different grain size. Dark current-voltage (I-V) measurements and impedance characterization have been found to be dependent on the grain size and on the quality of the examined samples.
Preliminary study on polycrystalline diamond films suitable for radiation detection
CELIBERTO, Roberto;FERRARO, Giovanni;GIGLIETTO, Nicola;
2009-01-01
Abstract
The microwave plasma enhanced chemical vapor deposition technique has been employed to grow polycrystalline diamond films on p-doped Si (100) substrates starting from highly diluted (1% CH4 in H2) gas mixtures. Coplanar interdigitated Cr/Au contacts have been thermally evaporated on two samples about 8 mum thick having different grain size. Dark current-voltage (I-V) measurements and impedance characterization have been found to be dependent on the grain size and on the quality of the examined samples.File in questo prodotto:
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