The microwave plasma enhanced chemical vapor deposition technique has been employed to grow polycrystalline diamond films on p-doped Si (100) substrates starting from highly diluted (1% CH4 in H2) gas mixtures. Coplanar interdigitated Cr/Au contacts have been thermally evaporated on two samples about 8 mum thick having different grain size. Dark current-voltage (I-V) measurements and impedance characterization have been found to be dependent on the grain size and on the quality of the examined samples.
|Titolo:||Preliminary study on polycrystalline diamond films suitable for radiation detection|
|Data di pubblicazione:||2009|
|Nome del convegno:||3rd International Workshop on Advances in Sensors and Interfaces, IWASI 2009|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1109/IWASI.2009.5184770|
|Appare nelle tipologie:||4.1 Contributo in Atti di convegno|