The microwave plasma enhanced chemical vapor deposition technique has been employed to grow polycrystalline diamond films on p-doped Si (100) substrates starting from highly diluted (1% CH4 in H2) gas mixtures. Coplanar interdigitated Cr/Au contacts have been thermally evaporated on two samples about 8 mum thick having different grain size. Dark current-voltage (I-V) measurements and impedance characterization have been found to be dependent on the grain size and on the quality of the examined samples.

Preliminary study on polycrystalline diamond films suitable for radiation detection

CELIBERTO, Roberto;FERRARO, Giovanni;GIGLIETTO, Nicola;
2009

Abstract

The microwave plasma enhanced chemical vapor deposition technique has been employed to grow polycrystalline diamond films on p-doped Si (100) substrates starting from highly diluted (1% CH4 in H2) gas mixtures. Coplanar interdigitated Cr/Au contacts have been thermally evaporated on two samples about 8 mum thick having different grain size. Dark current-voltage (I-V) measurements and impedance characterization have been found to be dependent on the grain size and on the quality of the examined samples.
3rd International Workshop on Advances in Sensors and Interfaces, IWASI 2009
978-1-4244-4708-4
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11589/21372
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