Comparison of CNTFET and MOSFET noise performance through the design of basic current mirror

In this paper we present a comparative analysis of noise performance of Carbon Nanotube Field Effect Transistors (CNTFETs) and MOSFET, through the design of a basic current mirror. We show the output I-V curves, the output differential conductances at various output voltages, the output admittance at various frequencies and the spectral density of output noise current. For reference current of 1 μA and 10 μA the output static and dynamic characteristics are better in the case of CNTFET, but for all cases the output noise current is always higher for the CNTFET than for the MOS. The software used is Advanced Design System (ADS) which is compatible with the Verilog A programming language.