Due to size and weight limitations, possible integrations of power electronics devices with electrical machines and propulsion engines are welcome in More-Electric-Aircrafts (MEA). Consequently, power converters are required to operate in harsh environments with high temperatures. SiC power devices are preferable in this context since they can tolerate high junction temperature and contribute reducing size and weight of the cooling system. In this paper, a 270/28 V SiC MOSFET Dual Active Bridge (DAB) converter is presented. In particular, its thermal behavior in harsh environments is investigated. Using two different tools, the performances of the system are analyzed at two levels: the single SiC MOSFET power module and the complete DAB converter. Results confirm the feasibility of the proposed power stage also when the ambient temperature rises above 300 C.
SiC MOSFET Dual Active Bridge Converter for Harsh Environment Applications in a More-Electric-Aircraft / Mastromauro, R. A.; Poliseno, M. C.; Pugliese, S.; Cupertino, Francesco; Stasi, Silvio. - (2015). (Intervento presentato al convegno IEEE 3rd International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles, ESARS 2015 tenutosi a Aachen, Germany nel 3-5 March 2015) [10.1109/ESARS.2015.7101427].
SiC MOSFET Dual Active Bridge Converter for Harsh Environment Applications in a More-Electric-Aircraft
CUPERTINO, Francesco;STASI, Silvio
2015-01-01
Abstract
Due to size and weight limitations, possible integrations of power electronics devices with electrical machines and propulsion engines are welcome in More-Electric-Aircrafts (MEA). Consequently, power converters are required to operate in harsh environments with high temperatures. SiC power devices are preferable in this context since they can tolerate high junction temperature and contribute reducing size and weight of the cooling system. In this paper, a 270/28 V SiC MOSFET Dual Active Bridge (DAB) converter is presented. In particular, its thermal behavior in harsh environments is investigated. Using two different tools, the performances of the system are analyzed at two levels: the single SiC MOSFET power module and the complete DAB converter. Results confirm the feasibility of the proposed power stage also when the ambient temperature rises above 300 C.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
