Today, possibility of photovoltaic efficiency increase with use of semiconductor quantum dots (QDs) in solid inorganic solar cells is a dynamic research field due to nanotechnology development and use of III-V and III-V nitride semiconductors (GaN or InGaN). Self-assembled quantum dots (SAQDs) growth in Stranski-Krastanov (SK) mode are very interesting nano-structures in order to achieve this goal. In this paper results derived by a FEM simulation analysis of absorption coefficient done on small zincblende InAs/GaAs and wurtzite InxGa1-xN/InyGa1-yN (In content x > y) SAQDs are shown and related to possible use in solar cells.
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