We compare the electronic temperatures and the electron lattice coupling in mid-infrared and terahertz GaAs-based quantum cascade lasers (QCLs). Thermalized hot-electron distributions are found in both classes of QCLs. The results illustrate the influence of the quantum design on the electron-lattice energy relaxation rates, that ultimately determine the device thermal performance.
Experimental investigation of hot carriers in THz and mid-IR quantum cascade lasers / Scamarcio, G.; Spagnolo, V.; Vitiello, M. S.; Di Franco, C.. - STAMPA. - 110:(2006), pp. 89-94. (Intervento presentato al convegno 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors tenutosi a Chicago, IL nel July 25-29, 2005) [10.1007/978-3-540-36588-4_20].
Experimental investigation of hot carriers in THz and mid-IR quantum cascade lasers
V. Spagnolo;
2006
Abstract
We compare the electronic temperatures and the electron lattice coupling in mid-infrared and terahertz GaAs-based quantum cascade lasers (QCLs). Thermalized hot-electron distributions are found in both classes of QCLs. The results illustrate the influence of the quantum design on the electron-lattice energy relaxation rates, that ultimately determine the device thermal performance.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
