We report on the experimental measurement of active region lattice (TL) and electronic temperatures (Te) in terahertz quantum cascade devices based on the phonon-photon-phonon scheme, by means of microprobe band-to-band photoluminescence spectroscopy. Three mesa devices, differing for doping region and number of quantum wells composing the active region, have been investigated. With device on, under band alignment for lasing condition, we measured a difference (Te – TL) ~ 40 K much smaller than the typical value (Te – TL ~ 100 K) reported for resonant-phonon THz QCLs.
Electronic temperature in phonon-photon-phonon terahertz quantum cascade devices with high-operating temperature performance / Scamarcio, G.; Patimisco, Pietro; Santacroce, M. V.; Tempesta, P.; Spagnolo, V.; Vitiello, M. S.; Dupont, E.; Fathololoumi, S.; Laframboise, S. R.; Razavipour, S. G.; Wasilewski, Z.; Ban, D. and Liu H. C.. - STAMPA. - 8631:(2013). (Intervento presentato al convegno Photonic West 2013 Quantum Sensing and Nanophotonic Devices X tenutosi a San Francisco CA nel February 2-7, 2013) [10.1117/12.2006874].
Electronic temperature in phonon-photon-phonon terahertz quantum cascade devices with high-operating temperature performance
Patimisco, Pietro;Spagnolo V.;
2013-01-01
Abstract
We report on the experimental measurement of active region lattice (TL) and electronic temperatures (Te) in terahertz quantum cascade devices based on the phonon-photon-phonon scheme, by means of microprobe band-to-band photoluminescence spectroscopy. Three mesa devices, differing for doping region and number of quantum wells composing the active region, have been investigated. With device on, under band alignment for lasing condition, we measured a difference (Te – TL) ~ 40 K much smaller than the typical value (Te – TL ~ 100 K) reported for resonant-phonon THz QCLs.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
