This paper presents a comparative analysis of impact of temperature variation on I-V characteristics in two CNTFET models proposed in literature in order to identify the one more easily implementable in simulation software for electronic circuit design. At first we consider a compact, semi-empirical model, already proposed by us, performing I-V characteristic simulations at different temperatures. Our results are compared with those obtained with the numerical FETToy model, online available, obtaining I-V characteristics comparable, but with CPU calculation times lower.
A Comparative Analysis of Impact of Temperature Variation on CNTFET Device Characteristics / Marani, Roberto; Perri, Anna Gina. - In: INTERNATIONAL JOURNAL OF RESEARCH AND REVIEWS IN APPLIED SCIENCES. - ISSN 2076-734X. - STAMPA. - 47:(2021), pp. 49-56.
A Comparative Analysis of Impact of Temperature Variation on CNTFET Device Characteristics
Roberto MaraniSoftware
;Anna Gina Perri
Conceptualization
2021-01-01
Abstract
This paper presents a comparative analysis of impact of temperature variation on I-V characteristics in two CNTFET models proposed in literature in order to identify the one more easily implementable in simulation software for electronic circuit design. At first we consider a compact, semi-empirical model, already proposed by us, performing I-V characteristic simulations at different temperatures. Our results are compared with those obtained with the numerical FETToy model, online available, obtaining I-V characteristics comparable, but with CPU calculation times lower.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
