Recent theoretical and experimental studies of pattern and cavity solitons (CS) formation in semiconductor microresonators were performed with Multiple Quantum Well (MQW) or bulk GaAs as active materials. For such models, thermal effects can become relevant and the combined effect of field diffraction, carrier diffusion, heating and thermal diffusion must be considered both in active and passive configurations. This papepr proposes to use InAs Quantum Dots (QD), embedded in GaAs as a new active material for pattern and localized structures formation.
Cavity solitons and self organized patterns in semiconductor quantum dot microcavities / Maggipinto, T.; Perrini, I. M.; Brambilla, Massimo; Barbay, S; Koehler, J; Kuszelewicz, R.. - (2002), pp. 215-216. (Intervento presentato al convegno 15th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society, LEOS 2002 tenutosi a Glasgow, UK nel November 10-14, 2002) [10.1109/LEOS.2002.1134004].
Cavity solitons and self organized patterns in semiconductor quantum dot microcavities
BRAMBILLA, Massimo;
2002-01-01
Abstract
Recent theoretical and experimental studies of pattern and cavity solitons (CS) formation in semiconductor microresonators were performed with Multiple Quantum Well (MQW) or bulk GaAs as active materials. For such models, thermal effects can become relevant and the combined effect of field diffraction, carrier diffusion, heating and thermal diffusion must be considered both in active and passive configurations. This papepr proposes to use InAs Quantum Dots (QD), embedded in GaAs as a new active material for pattern and localized structures formation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
