We present a aimulation study of noise behavior in basic current mirror using CNTFET and MOSFET, obtaining that the output noise current is always higher for the CNTFET than for the MOS device.
A Simulation Study of Noise Behavior in Basic Current Mirror using CNTFET and MOSFET / Marani, Roberto; Perri, Anna Gina. - In: THE INTERNATIONAL JOURNAL OF EMERGING TECHNOLOGY AND ADVANCED ENGINEERING. - ISSN 2250-2459. - ELETTRONICO. - 11:7(2021), pp. 3.13-3.18. [10.46338/ijetae0721_03]
A Simulation Study of Noise Behavior in Basic Current Mirror using CNTFET and MOSFET
Roberto MaraniSoftware
;Anna Gina Perri
Methodology
2021-01-01
Abstract
We present a aimulation study of noise behavior in basic current mirror using CNTFET and MOSFET, obtaining that the output noise current is always higher for the CNTFET than for the MOS device.File in questo prodotto:
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