InP generic processes allow monolithic integration of sources, passive elements and detectors on a common p-n doped layerstack. The passive loss can be greatly reduced by formation of local p-n junctions by means of Zn-Diffusion or regrowth. The attainable loss is experimentally derived from spiral ring resonators, coupled to a waveguide via multimode interference. By folding the ring into a spiral we obtain circumferences up to 73 mm, with a footprint of 2.4 mm x 3.6 mm. We measure a quality factor of 1.2 million and extinction ratio of 9.7 dB, implying a loss below 0.4 dB/cm.
Low loss waveguides for standardized InP integration processes / D., D'Agostino; G., Carnicella; Ciminelli, Caterina; H. P. M. M., Ambrosius; M. K., Smit. - (2014), pp. 111-114. (Intervento presentato al convegno 19th Annual Symposium of the IEEE Photonics Benelux Chapter tenutosi a Enschede, The Netherlands nel November 3-4, 2014).
Low loss waveguides for standardized InP integration processes
CIMINELLI, Caterina;
2014-01-01
Abstract
InP generic processes allow monolithic integration of sources, passive elements and detectors on a common p-n doped layerstack. The passive loss can be greatly reduced by formation of local p-n junctions by means of Zn-Diffusion or regrowth. The attainable loss is experimentally derived from spiral ring resonators, coupled to a waveguide via multimode interference. By folding the ring into a spiral we obtain circumferences up to 73 mm, with a footprint of 2.4 mm x 3.6 mm. We measure a quality factor of 1.2 million and extinction ratio of 9.7 dB, implying a loss below 0.4 dB/cm.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
