We develop a model that describes the optical response of a semiconductor quantum dot microcavity pumped above transparency but kept slightly below threshold. The model takes into account the inhomogeneous broadening of the dot emission, the coupling mechanisms between quantum dots and the wetting layer and incorporates gain asymmetry factors in the thermo-emission and capture coefficients. The role of asymmetries with respect to alpha factor and pattern formation is investigated. We then study the conditions for the onset of bistabiliry and modulational instability and characterize the patterns formed.
Pattern formation in multistacked-quantum-dot-based microcavities: Modelization and role of gain asymmetries in the alpha factor / Maggipinto, T.; Brambilla, M.; Perrini, I. M.; Barbay, S.; Kuszelewicz, R.. - STAMPA. - 6468:(2007). (Intervento presentato al convegno Conference on Physics and Simulation of Optoelectronic Devices XV tenutosi a San Jose, CA nel January 20-25, 2007) [10.1117/12.717185].
Pattern formation in multistacked-quantum-dot-based microcavities: Modelization and role of gain asymmetries in the alpha factor
M. Brambilla;
2007-01-01
Abstract
We develop a model that describes the optical response of a semiconductor quantum dot microcavity pumped above transparency but kept slightly below threshold. The model takes into account the inhomogeneous broadening of the dot emission, the coupling mechanisms between quantum dots and the wetting layer and incorporates gain asymmetry factors in the thermo-emission and capture coefficients. The role of asymmetries with respect to alpha factor and pattern formation is investigated. We then study the conditions for the onset of bistabiliry and modulational instability and characterize the patterns formed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
