In this paper a detailed investigation of the distributed Bragg reflectors in GaAs-based vertical cavity surface emitting lasers is presented. The influence of layer doping concentration, number of periods, oxide aperture and AlxGa1-xAs alloy composition on output emission power and threshold current has been found. Both oxidized and non oxidized structures have been considered. A number of interpolation curves are extracted and presented for design and fabrication purposes. Although the results are presented for GaAs-based structures, the theoretical approach is very general.
|Titolo:||Optimization of Bragg reflectors in AlGaAs/GaAs VCSELs|
|Data di pubblicazione:||2005|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1002/lapl.200410179|
|Appare nelle tipologie:||1.1 Articolo in rivista|