In this paper a detailed investigation of the distributed Bragg reflectors in GaAs-based vertical cavity surface emitting lasers is presented. The influence of layer doping concentration, number of periods, oxide aperture and AlxGa1-xAs alloy composition on output emission power and threshold current has been found. Both oxidized and non oxidized structures have been considered. A number of interpolation curves are extracted and presented for design and fabrication purposes. Although the results are presented for GaAs-based structures, the theoretical approach is very general.
Optimization of Bragg reflectors in AlGaAs/GaAs VCSELs / Passaro, V. M. N.; Magno, F.; De Leonardis, F.. - In: LASER PHYSICS LETTERS. - ISSN 1612-2011. - 2:5(2005), pp. 239-246. [10.1002/lapl.200410179]
Optimization of Bragg reflectors in AlGaAs/GaAs VCSELs
Passaro, V. M. N.;De Leonardis, F.
2005-01-01
Abstract
In this paper a detailed investigation of the distributed Bragg reflectors in GaAs-based vertical cavity surface emitting lasers is presented. The influence of layer doping concentration, number of periods, oxide aperture and AlxGa1-xAs alloy composition on output emission power and threshold current has been found. Both oxidized and non oxidized structures have been considered. A number of interpolation curves are extracted and presented for design and fabrication purposes. Although the results are presented for GaAs-based structures, the theoretical approach is very general.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
