In this paper a detailed investigation of the distributed Bragg reflectors in GaAs-based vertical cavity surface emitting lasers is presented. The influence of layer doping concentration, number of periods, oxide aperture and AlxGa1-xAs alloy composition on output emission power and threshold current has been found. Both oxidized and non oxidized structures have been considered. A number of interpolation curves are extracted and presented for design and fabrication purposes. Although the results are presented for GaAs-based structures, the theoretical approach is very general.
Optimization of Bragg reflectors in AlGaAs/GaAs VCSELs
Passaro, V. M. N.;De Leonardis, F.
2005-01-01
Abstract
In this paper a detailed investigation of the distributed Bragg reflectors in GaAs-based vertical cavity surface emitting lasers is presented. The influence of layer doping concentration, number of periods, oxide aperture and AlxGa1-xAs alloy composition on output emission power and threshold current has been found. Both oxidized and non oxidized structures have been considered. A number of interpolation curves are extracted and presented for design and fabrication purposes. Although the results are presented for GaAs-based structures, the theoretical approach is very general.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
