In this paper we present a comparative analysis of noise performance of Carbon Nanotube Field Effect Transistors (CNTFETs) and MOSFET, through the design of two circuits: a basic current mirror and self-bias current mirror, each time with different current values. For this aim we use a semi-empirical compact CNTFET model, already proposed by us, including noise source contributions, and the BSIM4 model for MOS device. Then we analyze and discuss the spectral density of output noise current, comparing the two considered technology. The software used is Advanced Design System (ADS), compatible with the Verilog A programming language.
Analysis of Noise in Current Mirror Circuits Based on CNTFET and MOSFET / Marani, Roberto; Perri, Anna Gina. - In: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. - ISSN 2162-8777. - ELETTRONICO. - 11:3(2022). [10.1149/2162-8777/ac5eb1]
Analysis of Noise in Current Mirror Circuits Based on CNTFET and MOSFET
Roberto MARANISoftware
;Anna Gina PERRI
Conceptualization
2022-01-01
Abstract
In this paper we present a comparative analysis of noise performance of Carbon Nanotube Field Effect Transistors (CNTFETs) and MOSFET, through the design of two circuits: a basic current mirror and self-bias current mirror, each time with different current values. For this aim we use a semi-empirical compact CNTFET model, already proposed by us, including noise source contributions, and the BSIM4 model for MOS device. Then we analyze and discuss the spectral density of output noise current, comparing the two considered technology. The software used is Advanced Design System (ADS), compatible with the Verilog A programming language.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
