We have developed a full simulation code to evaluate the response of silicon strip detectors (SSDs) to ionizing.particles. This simulation can be applied in the design stage of a SSD, when the detector parameters have to be chosen in order to optimize its performance. Our code allows to evaluate the electrical signals produced by ionizing particles crossing a SSD. All the physical processes leading to the generation of electron-hole pairs in silicon have been taken into account. Induced current signals on the readout strips are evaluated using the Shockley-Ramo theorem to the charge carriers propagating inside the detector volume. A simulation of the readout electronics has been implemented, to convert current signals into voltage signals. The predictions of our Monte Carlo simulation have been compared with experimental data taken using a 400 mum thick silicon strip detector with a 228 mum strip pitch exposed to a pion beam. (C) 2004 Elsevier B.V. All rights reserved.
|Titolo:||A new Monte Carlo code for full simulation of silicon strip detectors|
|Data di pubblicazione:||2004|
|Digital Object Identifier (DOI):||10.1016/j.nima.2004.05.127|
|Appare nelle tipologie:||1.1 Articolo in rivista|