In this paper we study the application of a single-CNTFET as power amplifier in the THz frequency range, using a CNTFET model, already proposed by us. We show that the device has, within stable condition, a Maximum Gain of at least 29 dB at frequencies below 30 GHz, decreasing to 20 dB at 800 GHz and reaching 18 dB at 1 THz. Through the analysis of a simple example, we show that it is possible to obtain a stable amplifier with tuned matching with a gain near the Maximum Gain at 1 THz. Finally we show that the matching of this device requires high ratio which could be hard to implement at 1THz.

Study of power gain capability of CNTFET power amplifier in THz frequency range

Gennaro Gelao
Software
;
Roberto Marani
Validation
;
Anna Gina Perri
Methodology
2022

Abstract

In this paper we study the application of a single-CNTFET as power amplifier in the THz frequency range, using a CNTFET model, already proposed by us. We show that the device has, within stable condition, a Maximum Gain of at least 29 dB at frequencies below 30 GHz, decreasing to 20 dB at 800 GHz and reaching 18 dB at 1 THz. Through the analysis of a simple example, we show that it is possible to obtain a stable amplifier with tuned matching with a gain near the Maximum Gain at 1 THz. Finally we show that the matching of this device requires high ratio which could be hard to implement at 1THz.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11589/241820
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