In this paper initially we present two CNTFET models: the first, already proposed by us and the second the Stanford model, recalling our method to match the output characteristics and transconductance characteristics between these two models. Then we briefly recall a compact noise model, proposed by us, used to simulate the performance of some digital CNTFET circuits, for which we present the DC, transient and noise analysis. In particular we examine an inverter gate and the proposed analysis allows to determine the optimal value of input voltage which makes the noise effects negligible.

Noise Effects in the Design of Digital Circuits Based on CNTFET

Roberto Marani
Software
;
Anna Gina Perri
Conceptualization
2022

Abstract

In this paper initially we present two CNTFET models: the first, already proposed by us and the second the Stanford model, recalling our method to match the output characteristics and transconductance characteristics between these two models. Then we briefly recall a compact noise model, proposed by us, used to simulate the performance of some digital CNTFET circuits, for which we present the DC, transient and noise analysis. In particular we examine an inverter gate and the proposed analysis allows to determine the optimal value of input voltage which makes the noise effects negligible.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/245082
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact