This paper presents a procedure, based on Thevenin equivalent method, to analyse the noise effects in analog circuits based on CNTFET and MOS devices. To achieve this goal, we use a semi-empirical compact CNTFET model, already proposed by us, including noise source contributions, and the BSIM4 model for MOS device. After a brief review of these models, as example of analog circuit, the proposed procedure is applied to study a basic current mirror and the simulation results allow to determine easily the different noise contribution of every single source. The software used is Advanced Design System (ADS) which is compatible with the Verilog-A programming language.

A Technique, Based on Thevenin Equivalent Method, to Study the Noise Performance of Analog Circuits Involving both CNTFET and MOS Devices / Marani, Roberto; Perri, Anna Gina. - In: INTERNATIONAL JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY. - ISSN 2423-5911. - ELETTRONICO. - 19:1(2023), pp. 9-19. [10.22034/ijnn.2023.1988468.2327]

A Technique, Based on Thevenin Equivalent Method, to Study the Noise Performance of Analog Circuits Involving both CNTFET and MOS Devices

Roberto Marani
Software
;
Anna Gina Perri
Methodology
2023-01-01

Abstract

This paper presents a procedure, based on Thevenin equivalent method, to analyse the noise effects in analog circuits based on CNTFET and MOS devices. To achieve this goal, we use a semi-empirical compact CNTFET model, already proposed by us, including noise source contributions, and the BSIM4 model for MOS device. After a brief review of these models, as example of analog circuit, the proposed procedure is applied to study a basic current mirror and the simulation results allow to determine easily the different noise contribution of every single source. The software used is Advanced Design System (ADS) which is compatible with the Verilog-A programming language.
2023
A Technique, Based on Thevenin Equivalent Method, to Study the Noise Performance of Analog Circuits Involving both CNTFET and MOS Devices / Marani, Roberto; Perri, Anna Gina. - In: INTERNATIONAL JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY. - ISSN 2423-5911. - ELETTRONICO. - 19:1(2023), pp. 9-19. [10.22034/ijnn.2023.1988468.2327]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/248040
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