Anti-parity-time induced by Four Wave Mixing is theoretically demonstrated and numerically evaluated in a Silicon Nitride integrated platform. The existence of the exceptional point which separates a broken and an unbroken anti-PT-symmetric phases can be exploited for sensing applications.

Anti-PT-Symmetry induced by Four Wave Mixing in Silicon Nitride Integrated Photonic Resonators / De Leonardis, F; De Carlo, M; Passaro, Vmn. - (2021), pp. 1-2. [10.1109/IPC48725.2021.9592959]

Anti-PT-Symmetry induced by Four Wave Mixing in Silicon Nitride Integrated Photonic Resonators

De Leonardis, F
Membro del Collaboration Group
;
De Carlo, M
Membro del Collaboration Group
;
Passaro, VMN
Membro del Collaboration Group
2021-01-01

Abstract

Anti-parity-time induced by Four Wave Mixing is theoretically demonstrated and numerically evaluated in a Silicon Nitride integrated platform. The existence of the exceptional point which separates a broken and an unbroken anti-PT-symmetric phases can be exploited for sensing applications.
2021
978-1-6654-1601-6
Anti-PT-Symmetry induced by Four Wave Mixing in Silicon Nitride Integrated Photonic Resonators / De Leonardis, F; De Carlo, M; Passaro, Vmn. - (2021), pp. 1-2. [10.1109/IPC48725.2021.9592959]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/253022
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