Anti-parity-time induced by Four Wave Mixing is theoretically demonstrated and numerically evaluated in a Silicon Nitride integrated platform. The existence of the exceptional point which separates a broken and an unbroken anti-PT-symmetric phases can be exploited for sensing applications.
Anti-PT-Symmetry induced by Four Wave Mixing in Silicon Nitride Integrated Photonic Resonators / De Leonardis, F; De Carlo, M; Passaro, Vmn. - (2021), pp. 1-2. [10.1109/IPC48725.2021.9592959]
Anti-PT-Symmetry induced by Four Wave Mixing in Silicon Nitride Integrated Photonic Resonators
De Leonardis, FMembro del Collaboration Group
;De Carlo, MMembro del Collaboration Group
;Passaro, VMNMembro del Collaboration Group
2021-01-01
Abstract
Anti-parity-time induced by Four Wave Mixing is theoretically demonstrated and numerically evaluated in a Silicon Nitride integrated platform. The existence of the exceptional point which separates a broken and an unbroken anti-PT-symmetric phases can be exploited for sensing applications.File in questo prodotto:
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