We examined the structural properties of Si layers embedded in GaAs and AlAs-GaAs structures by means of X-ray diffraction and transmission electron microscopy to identify growth parameters for the synthesis of Si-GaAs superlattices. We find that localized pseudomorphic Si layers can be obtained by molecular beam epitaxy at 500–540°C up to a thickness of 7–8 monolayers. Fifteen period Si-GaAs(001) superlattices involving Si layers 2–3 monolayer thick were then synthesized using the same growth parameters. X-ray diffraction measurements and Raman spectroscopy studies confirm that pseudomorphic growth and relatively abrupt interfaces were achieved.
Si-GaAs(001) superlattice structure / Sorba, L.; Bratina, G.; Franciosi, A.; Tapfer, L.; Scamarcio, G.; Spagnolo, V.; Migliori, A.; Merli, P.; Molinari, E.. - In: JOURNAL OF CRYSTAL GROWTH. - ISSN 0022-0248. - STAMPA. - 127:1-4(1993), pp. 121-125. [10.1016/0022-0248(93)90590-S]
Si-GaAs(001) superlattice structure
Spagnolo, V.;
1993-01-01
Abstract
We examined the structural properties of Si layers embedded in GaAs and AlAs-GaAs structures by means of X-ray diffraction and transmission electron microscopy to identify growth parameters for the synthesis of Si-GaAs superlattices. We find that localized pseudomorphic Si layers can be obtained by molecular beam epitaxy at 500–540°C up to a thickness of 7–8 monolayers. Fifteen period Si-GaAs(001) superlattices involving Si layers 2–3 monolayer thick were then synthesized using the same growth parameters. X-ray diffraction measurements and Raman spectroscopy studies confirm that pseudomorphic growth and relatively abrupt interfaces were achieved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
