Si-GaAs(001) superlattices have been grown by molecular beam epitaxy. X-ray interference measurements and Raman spectroscopy studies in the acoustic range for (Si)2(GaAs)28 and (Si)3(GaAs)50 superlattice structures demonstrate that pseudomorphic growth conditions were achieved. Raman data in the optical range show large (approximately 50-70 cm-1) confinement- and strain-induced shifts of the Si-like optical modes.
Si-GaAs(001) Superlattices / Sorba, L.; Bratina, G.; Franciosi, A.; Tapfer, L.; Scamarcio, G.; Spagnolo, V.; Molinari, E.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 61:13(1992), pp. 1570-1572. [10.1063/1.107499]
Si-GaAs(001) Superlattices
Spagnolo, V.;
1992-01-01
Abstract
Si-GaAs(001) superlattices have been grown by molecular beam epitaxy. X-ray interference measurements and Raman spectroscopy studies in the acoustic range for (Si)2(GaAs)28 and (Si)3(GaAs)50 superlattice structures demonstrate that pseudomorphic growth conditions were achieved. Raman data in the optical range show large (approximately 50-70 cm-1) confinement- and strain-induced shifts of the Si-like optical modes.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
