We present the beam test results of single-sided silicon microstrip detectors, with different substrate resistivities. The effects of radiation damage are studied for a detector irradiated to a fluence of 2.4 x 10(14) n/cm(2). The detectors are read out with the APV6 chip, which is compatible with the 40 MHz LHC clock, The performance of different detectors and readout modes are studied in terms of signal-to-noise ratio and efficiency. (C) 2002 Elsevier Science B.V. All rights reserved.
|Titolo:||Study of radiation damage and substrate resistivity effects from beam test of silicon microstrip detectors using LHC readout electronics|
|Data di pubblicazione:||2002|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1016/S0168-9002(02)00267-X|
|Appare nelle tipologie:||1.1 Articolo in rivista|