Analisi comparativa delle proprietà dei materiali per eterostrutture

In this paper, after a description of the techniques used to realize heterostructures or heterojunctions, which, as known, are junctions obtained using different semiconductors, i.e. having different values of the band gap, we present a comparative analysis of the properties of materials used, in order to identify those that best adapt to the different fields of application. At last we present, as an example, a simulation study of a TFET (Tunneling Field Effect Transistor) inverter, whose performances are compared with those of a typical MOS inverter, in order to evaluate the differences in power, telecommunication and digital electronic applications.