In this paper, we show the idea of a non-volatile multilevel memory, realized with an optical resonator. The crosssection of the resonator is realized with Si3N4 buried in SiO2, with segmented layers of Sb2Se3 periodically deposited above the Silicon Nitride (separated by a thin layer of Silicon Dioxide). Thanks to the programmability of each segment of Sb2 S3 by means of thermal pulses, a digitalized average effective refractive index along the resonator is obtained. In this way it is possible to obtain a multilevel switch with amplitude reading around a wavelength of 1550 nm.
Sb2S3-based resonant non-volatile multilevel optical memory / Carlo, Martino De; Leonardis, Francesco De; Soref, Richard; Passaro, Vittorio M. N.. - (2024), pp. 1-4. (Intervento presentato al convegno 24th International Conference on Transparent Optical Networks (ICTON)) [10.1109/icton62926.2024.10647512].
Sb2S3-based resonant non-volatile multilevel optical memory
Carlo, Martino DeMembro del Collaboration Group
;Leonardis, Francesco DeMembro del Collaboration Group
;Passaro, Vittorio M. N.Membro del Collaboration Group
2024-01-01
Abstract
In this paper, we show the idea of a non-volatile multilevel memory, realized with an optical resonator. The crosssection of the resonator is realized with Si3N4 buried in SiO2, with segmented layers of Sb2Se3 periodically deposited above the Silicon Nitride (separated by a thin layer of Silicon Dioxide). Thanks to the programmability of each segment of Sb2 S3 by means of thermal pulses, a digitalized average effective refractive index along the resonator is obtained. In this way it is possible to obtain a multilevel switch with amplitude reading around a wavelength of 1550 nm.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
