Silicon Photomultipliers (SiPMs) have proven to be highly suitable photo-sensors devices for many astroparticlephysics applications where high sensitivity to low-intensity light and fast responses are required. Among their many advantages are their low operational voltage when compared with classical photomultiplier tubes, mechanical robustness, and increased photon detection efficiency. Here we present the characterization measurements of a new SiPM technology developed by Fondazione Bruno Kessler (FBK), sensitive to blue/NearUltraviolet (NUV) light and featured by narrow metal-filled trenches in the area surrounding the single-photon avalanche diodes. Such technological upgrade allows a strong suppression of the internal optical crosstalk compared to previous devices and an extended bias voltage operating range.
Characterization of the new FBK NUV SiPMs with low cross-talk probability / Loizzo, Pierpaolo; Acerbi, Fabio; Bissaldi, Elisabetta; Venere, Leonardo Di; Gargano, Fabio; Giordano, Francesco; Gola, Alberto; Loporchio, Serena; Merzi, Stefano; Penna, Michele. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - 1068:(2024). [10.1016/j.nima.2024.169751]
Characterization of the new FBK NUV SiPMs with low cross-talk probability
Bissaldi, ElisabettaMembro del Collaboration Group
;Loporchio, SerenaMembro del Collaboration Group
;
2024-01-01
Abstract
Silicon Photomultipliers (SiPMs) have proven to be highly suitable photo-sensors devices for many astroparticlephysics applications where high sensitivity to low-intensity light and fast responses are required. Among their many advantages are their low operational voltage when compared with classical photomultiplier tubes, mechanical robustness, and increased photon detection efficiency. Here we present the characterization measurements of a new SiPM technology developed by Fondazione Bruno Kessler (FBK), sensitive to blue/NearUltraviolet (NUV) light and featured by narrow metal-filled trenches in the area surrounding the single-photon avalanche diodes. Such technological upgrade allows a strong suppression of the internal optical crosstalk compared to previous devices and an extended bias voltage operating range.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
