A Light Procedure to Analyse the CNTFET Behaviour in Sub-Threshold Region for Ultra-low Power Applications

The aim of this paper is to propose a procedure to analyze the behavior of Carbon NanoTube Field Effect Transistors (CNTFETs) operating in sub-threshold region for ultra-low power applications, through the design of a SRAM cell, in which we use a CNTFET model, already proposed by us. The proposed technique allows to obtain easily static, dynamic and transient analysis, in order to determine the optimal operating condition. All simulations are carried out using the software Advanced Design System (ADS), which is compatible with the Verilog-A programming language.