The nonlinear optical response of self-assembled quantum dots (QD) is relevant to the application of QD-based devices in nonlinear optics, all-optical switching, slow light, and self-organization. Theoretical investigations are based on numerical simulations of a spatially and spectrally resolved rate equation model, which takes into account the strong coupling of the quantum dots to the carrier reservoir created by the wetting layer (WL) states. The complex dielectric susceptibility of the ground state is obtained. The saturation is shown to follow a behavior in between the one for a dominantly homogeneously and inhomogeneously broadened medium. Approaches to extract the nonlinear refractive index change by fringe shifts in a cavity or self-lensing are discussed. Experimental work on saturation characteristic of InGa/GaAs quantum dots close to the telecommunication O-band (1240–1280 nm) and of InAlAs/GaAlAs QD at 780 nm is described and the first demonstration of the cw saturation of absorption in room temperature QD samples is discussed in detail.
Nonlinear Optics and Saturation Behavior of Quantum Dot Samples Under Continuous Wave Driving / Ackemann, T.; Tierno, A.; Kuszelewicz, R.; Barbay, S.; Brambilla, M.; Leburn, C. G.; Brown, C. T. A. (LECTURE NOTES IN NANOSCALE SCIENCE AND TECHNOLOGY). - In: Quantum Dot Devices / [a cura di] Zhiming M. Wang. - ELETTRONICO. - [s.l], 2012. - ISBN 9781461435693. - pp. 251-295 [10.1007/978-1-4614-3570-9_12]
Nonlinear Optics and Saturation Behavior of Quantum Dot Samples Under Continuous Wave Driving
Brambilla, M.;
2012
Abstract
The nonlinear optical response of self-assembled quantum dots (QD) is relevant to the application of QD-based devices in nonlinear optics, all-optical switching, slow light, and self-organization. Theoretical investigations are based on numerical simulations of a spatially and spectrally resolved rate equation model, which takes into account the strong coupling of the quantum dots to the carrier reservoir created by the wetting layer (WL) states. The complex dielectric susceptibility of the ground state is obtained. The saturation is shown to follow a behavior in between the one for a dominantly homogeneously and inhomogeneously broadened medium. Approaches to extract the nonlinear refractive index change by fringe shifts in a cavity or self-lensing are discussed. Experimental work on saturation characteristic of InGa/GaAs quantum dots close to the telecommunication O-band (1240–1280 nm) and of InAlAs/GaAlAs QD at 780 nm is described and the first demonstration of the cw saturation of absorption in room temperature QD samples is discussed in detail.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
