In this paper we present a procedure to model and characterize the current voltage characteristics of Schottky Barrier (SB) Carbon NanoTube Field Effect Transistors (SB-CNTFETs) below and above threshold, to evaluate the noise margin, whose values are necessary in the design of digital circuits.
MODELLING OF SUBTHRESHOLD CURRENTS IN SB-CNTFETs / Marani, Roberto; Perri, Anna Gina. - In: I-MANAGER'S JOURNAL ON ELECTRONICS ENGINEERING. - ISSN 2249-0760. - ELETTRONICO. - 16:2(2026), pp. 1-6. [10.26634/jele.16.2.909]
MODELLING OF SUBTHRESHOLD CURRENTS IN SB-CNTFETs
Roberto MARANISoftware
;Anna Gina PERRI
Conceptualization
2026
Abstract
In this paper we present a procedure to model and characterize the current voltage characteristics of Schottky Barrier (SB) Carbon NanoTube Field Effect Transistors (SB-CNTFETs) below and above threshold, to evaluate the noise margin, whose values are necessary in the design of digital circuits.File in questo prodotto:
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