In this paper, third-order nonlinearities in silicon-on-insulator rib waveguides are investigated to obtain complete modelling, describing the behaviour of a stimulated Raman scattering based laser. The simulations of a distributed Bragg reflector laser operation in a time domain allow for the first time to study in detail the dependence of threshold and output powers on different device parameters. Both continuous wave and pulsed laser operations are theoretically demonstrated, as well as their dependence on device parameters
Modeling of a DBR laser based on Raman effect in silicon-on-insulator rib waveguide / DE LEONARDIS, Francesco; Dimastrodonato, V; Passaro, Vittorio. - In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - ISSN 0268-1242. - 23:6(2008). [10.1088/0268-1242/23/6/064008]
Modeling of a DBR laser based on Raman effect in silicon-on-insulator rib waveguide
DE LEONARDIS, Francesco;PASSARO, Vittorio
2008-01-01
Abstract
In this paper, third-order nonlinearities in silicon-on-insulator rib waveguides are investigated to obtain complete modelling, describing the behaviour of a stimulated Raman scattering based laser. The simulations of a distributed Bragg reflector laser operation in a time domain allow for the first time to study in detail the dependence of threshold and output powers on different device parameters. Both continuous wave and pulsed laser operations are theoretically demonstrated, as well as their dependence on device parametersI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
