The depletion depth of irradiated n-type silicon microstrip detectors can be inferred from both the reciprocal capacitance and from the amount of collected charge. Capacitance voltage (C-V) measurements at different frequencies and temperatures are being compared with the bias voltage dependence of the charge collection on an irradiated n-type magnetic Czochralski silicon detector. Good agreement between the reciprocal capacitance and the median collected charge is found when the frequency of the C-V measurement is selected such that it scales with the temperature dependence of the leakage current. Measuring C-V characteristics at prescribed combinations of temperature and frequency allows then a realistic estimate of the depletion characteristics of irradiated silicon strip detectors based on C-V data alone. (c) 2007 Published by Elsevier B.V.
Charge collection and capacitance-voltage analysis in irradiated n-type magnetic Czochralski silicon detectors / Petterson, M.K., Sadrozinski, H.F.W., Betancourt, C., Bruzzi, M., Scaringella, M., Tosi, C., Macchiolo, A., Manna, N., Creanza, D.M., Boscardin, M., Piemonte, C., Zorzi, N., Borrello, L., Messineo, A., Dalla Betta, G.F.. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - 583:1(2007), pp. 189-194. [10.1016/j.nima.2007.08.222]
Charge collection and capacitance-voltage analysis in irradiated n-type magnetic Czochralski silicon detectors
CREANZA, Donato Maria;
2007
Abstract
The depletion depth of irradiated n-type silicon microstrip detectors can be inferred from both the reciprocal capacitance and from the amount of collected charge. Capacitance voltage (C-V) measurements at different frequencies and temperatures are being compared with the bias voltage dependence of the charge collection on an irradiated n-type magnetic Czochralski silicon detector. Good agreement between the reciprocal capacitance and the median collected charge is found when the frequency of the C-V measurement is selected such that it scales with the temperature dependence of the leakage current. Measuring C-V characteristics at prescribed combinations of temperature and frequency allows then a realistic estimate of the depletion characteristics of irradiated silicon strip detectors based on C-V data alone. (c) 2007 Published by Elsevier B.V.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
