The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26 MeV protons. After a 1 MeV neutron equivalent fluence of I X 10(15) cm(-2) the collected charge is reduced to 77% at bias voltages below 900V. This result is compared with previous results from charge collection measurements. (c) 2007 Published by Elsevier B.V.
|Titolo:||Charge collection measurements with p-type Magnetic Czochralski silicon single pad detectors|
|Data di pubblicazione:||2007|
|Digital Object Identifier (DOI):||10.1016/j.nima.2007.05.295|
|Appare nelle tipologie:||1.1 Articolo in rivista|