Within the R&D Program for the luminosity upgrade proposed for the Large Hadron Collider (LHC), silicon strip detectors (SSD) and test structures (TS) were manufactured on several high-resistivity substrates: p-type Magnetic Czochralski (MCz) and Float Zone (FZ), and n-type FZ. To test total dose (TID) effects they were irradiated with Co-60 gammas and the impact of surface radiation damage on the detector properties was studied. Selected results from the pre-rad and post-rad characterization of detectors and TS are presented, in particular interstrip capacitance and resistance, break-down voltage, flatband voltage and oxide charge. Surface damage effects show saturation after 150 krad and breakdown performance improves considerably after 210 krad. Annealing was performed both at room temperature and at 60 degrees C, and large effects on the surface parameters observed. (c) 2007 Elsevier B.V. All rights reserved.
|Titolo:||Total dose dependence of oxide charge, interstrip capacitance and breakdown behavior of sLHC prototype silicon strip detectors and test structures of the SMART collaboration|
|Data di pubblicazione:||2007|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1016/j.nima.2007.05.287|
|Appare nelle tipologie:||1.1 Articolo in rivista|