The results of the pre- and post-irradiation characterization of n- and p-type magnetic Czochralski silicon micro-strip sensors are reported. This work has been carried out within the INFN funded SMART project aimed at the development of radiation-hard semiconductor detectors for the luminosity upgrade of the large Hadron collider (LHC). The detectors have been fabricated at ITC-IRST (Trento, Italy) on 4 in wafers and the layout contains 10 mini-sensors. The devices have been irradiated with 24 GeV/c and 26 MeV protons in two different irradiation campaigns up to an equivalent fluence of 3.4 x 10(15) 1-MeV n/cm(2). The post-irradiation results show an improved radiation hardness of the magnetic Czochralski mini-sensors with respect to the reference float-zone sample. (c) 2006 Elsevier B.V. All rights reserved.

Characterization of micro-strip detectors made with high resistivity n- and p-type Czochralski silicon / Macchiolo, A., Borrello, L., Boscardin, M., Bruzzi, M., Creanza, D.M., Dalla Betta, G.F., Depalma, M., Focardi, E., Manna, N., Menichelli, D., Messineo, A., Piemonte, C., Radicci, V., Ronchin, S., Scaringella, M., Segneri, G., Sentenac, D., Zorzi, N.. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - 573:1-2(2007), pp. 216-219. [10.1016/j.nima.2006.10.244]

Characterization of micro-strip detectors made with high resistivity n- and p-type Czochralski silicon

CREANZA, Donato Maria;
2007

Abstract

The results of the pre- and post-irradiation characterization of n- and p-type magnetic Czochralski silicon micro-strip sensors are reported. This work has been carried out within the INFN funded SMART project aimed at the development of radiation-hard semiconductor detectors for the luminosity upgrade of the large Hadron collider (LHC). The detectors have been fabricated at ITC-IRST (Trento, Italy) on 4 in wafers and the layout contains 10 mini-sensors. The devices have been irradiated with 24 GeV/c and 26 MeV protons in two different irradiation campaigns up to an equivalent fluence of 3.4 x 10(15) 1-MeV n/cm(2). The post-irradiation results show an improved radiation hardness of the magnetic Czochralski mini-sensors with respect to the reference float-zone sample. (c) 2006 Elsevier B.V. All rights reserved.
2007
Characterization of micro-strip detectors made with high resistivity n- and p-type Czochralski silicon / Macchiolo, A., Borrello, L., Boscardin, M., Bruzzi, M., Creanza, D.M., Dalla Betta, G.F., Depalma, M., Focardi, E., Manna, N., Menichelli, D., Messineo, A., Piemonte, C., Radicci, V., Ronchin, S., Scaringella, M., Segneri, G., Sentenac, D., Zorzi, N.. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - 573:1-2(2007), pp. 216-219. [10.1016/j.nima.2006.10.244]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/3670
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