Capacitance, resistance and current measurements were carried out on single-sided, n(+) on n silicon strip detectors. We studied the type inversion after irradiating the detectors with neutron fluences up to 8.3 x 10(13) neutron/cm(2). To understand the macroscopic irradiation effects, a SPICE model of the detector was developed. Simulating the capacitance measurements, we were able to reproduce the measured frequency dependence of the relevant capacitances, both for non-irradiated and for irradiated detectors. (C) 1999 Published by Elsevier Science B.V. All rights reserved.
Characterisation and simulation of a single-sided, n+ on n silicon microstrip detector before and after neutron irradiation / Angarano, Mm; Bader, A; Creanza, D; de Palma, M; Fiore, L; Maggi, G; My, S; Raso, G; Selvaggi, G; Tempesta, P. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 428:2-3(1999), pp. 336-347. [10.1016/S0168-9002(99)00042-X]
Characterisation and simulation of a single-sided, n+ on n silicon microstrip detector before and after neutron irradiation
Creanza D;Maggi G;
1999-01-01
Abstract
Capacitance, resistance and current measurements were carried out on single-sided, n(+) on n silicon strip detectors. We studied the type inversion after irradiating the detectors with neutron fluences up to 8.3 x 10(13) neutron/cm(2). To understand the macroscopic irradiation effects, a SPICE model of the detector was developed. Simulating the capacitance measurements, we were able to reproduce the measured frequency dependence of the relevant capacitances, both for non-irradiated and for irradiated detectors. (C) 1999 Published by Elsevier Science B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
