Capacitance, resistance and current measurements were carried out on single-sided, n(+) on n silicon strip detectors. We studied the type inversion after irradiating the detectors with neutron fluences up to 8.3 x 10(13) neutron/cm(2). To understand the macroscopic irradiation effects, a SPICE model of the detector was developed. Simulating the capacitance measurements, we were able to reproduce the measured frequency dependence of the relevant capacitances, both for non-irradiated and for irradiated detectors. (C) 1999 Published by Elsevier Science B.V. All rights reserved.
|Titolo:||Characterisation and simulation of a single-sided, n+ on n silicon microstrip detector before and after neutron irradiation|
|Data di pubblicazione:||1999|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1016/S0168-9002(99)00042-X|
|Appare nelle tipologie:||1.1 Articolo in rivista|