The local temperature of quantum-cascade lasers operating in continuous wave mode is reported. This information is extracted from the thermal shift of the band-to-band photoluminescence peaks in the AlInAs and InP cladding layers of quantum-cascade laser facets using a high-resolution microprobe setup. Interpolation by means of a two-dimensional heat diffusion model allows to obtain the temperature profile and the thermal conductivity in the waveguide core. Comparison between substrate and epilayer-side mounted lasers shows the superior thermal dissipation capability of the latter, and explains their better performance with respect to threshold current and maximum operating temperature.
|Titolo:||Temperature profile of GaInAs/AlInAs/InP quantum cascade-laser facets measured by microprobe photoluminescence|
|Data di pubblicazione:||2001|
|Digital Object Identifier (DOI):||10.1063/1.1359146|
|Appare nelle tipologie:||1.1 Articolo in rivista|