We theoretically demonstrate negative refraction and subwavelength resolution below the diffraction limit in the UV and extreme UV ranges using semiconductors. The metal-like response of typical semiconductors such as GaAs or GaP makes it possible to achieve negative refraction and superguiding in resonant semiconductor/dielectric multilayer stacks, similar to what has been demonstrated in metallodielectric photonic band gap structures. The exploitation of this basic property in semiconductors raises the possibility of yet-untapped applications in the UV and soft x-ray ranges.
|Titolo:||Semiconductor-based superlens for subwavelength resolution below the diffraction limit at extreme ultraviolet frequencies|
|Data di pubblicazione:||2009|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1063/1.3126712|
|Appare nelle tipologie:||1.1 Articolo in rivista|