We theoretically demonstrate negative refraction and subwavelength resolution below the diffraction limit in the UV and extreme UV ranges using semiconductors. The metal-like response of typical semiconductors such as GaAs or GaP makes it possible to achieve negative refraction and superguiding in resonant semiconductor/dielectric multilayer stacks, similar to what has been demonstrated in metallodielectric photonic band gap structures. The exploitation of this basic property in semiconductors raises the possibility of yet-untapped applications in the UV and soft x-ray ranges.
Semiconductor-based superlens for subwavelength resolution below the diffraction limit at extreme ultraviolet frequencies / Vincenti, M. A.; D'Orazio, Antonella; Cappeddu, M. G.; Akozbek, N.; Bloemer, M. J.; Scalora, M.. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 105:10(2009). [10.1063/1.3126712]
Semiconductor-based superlens for subwavelength resolution below the diffraction limit at extreme ultraviolet frequencies
D'ORAZIO, Antonella;
2009-01-01
Abstract
We theoretically demonstrate negative refraction and subwavelength resolution below the diffraction limit in the UV and extreme UV ranges using semiconductors. The metal-like response of typical semiconductors such as GaAs or GaP makes it possible to achieve negative refraction and superguiding in resonant semiconductor/dielectric multilayer stacks, similar to what has been demonstrated in metallodielectric photonic band gap structures. The exploitation of this basic property in semiconductors raises the possibility of yet-untapped applications in the UV and soft x-ray ranges.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.