In this paper, the detailed modelling of Raman amplification in silicon-on-insulator (SOI) guided-wave resonant microcavities is developed for the first time. Theoretical results are compared with experiments in literature for either racetrack or microdisk resonators, demonstrating very good agreement. Investigation of resonant microcavity parameters, including pump and Stokes coupling factors and cavity lengths, is presented and their influence on pump enhancement factor is discussed. Design criteria are derived for both CW Raman lasers and pulsed Raman amplifiers
Modelling of Raman amplification in silicon-on-insulator optical microcavities / De Leonardis, Francesco; Passaro, Vittorio. - In: NEW JOURNAL OF PHYSICS. - ISSN 1367-2630. - ELETTRONICO. - 9:25(2007). [10.1088/1367-2630/9/1/001]
Modelling of Raman amplification in silicon-on-insulator optical microcavities
De Leonardis, Francesco;Passaro, Vittorio
2007-01-01
Abstract
In this paper, the detailed modelling of Raman amplification in silicon-on-insulator (SOI) guided-wave resonant microcavities is developed for the first time. Theoretical results are compared with experiments in literature for either racetrack or microdisk resonators, demonstrating very good agreement. Investigation of resonant microcavity parameters, including pump and Stokes coupling factors and cavity lengths, is presented and their influence on pump enhancement factor is discussed. Design criteria are derived for both CW Raman lasers and pulsed Raman amplifiersI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
