In this paper we presents a DC thermal model of recessed gate P-HEMTs in which we propose several issues to allow an easy implementation in circuit simulators. In particular we identify transistor thermal parameters, which have greater influence on the device behaviour. In order to verify the accuracy of the proposed model, the results are compared with those of a model, already proposed, obtaining a negligible relative error. However the proposed simplified model can be easily used for CAD applications, with computational time very short.
|Titolo:||A Simplified DC Thermal Model of Recessed Gate P-HEMTs for CAD Applications|
|Data di pubblicazione:||2014|
|Appare nelle tipologie:||1.1 Articolo in rivista|