An all-optical AND gate based on Raman effect in silicon-on-insulator technology is proposed. Stimulated Raman scattering, two photon absorption, free carrier dispersion, self and cross phase modulation induced by Kerr effect, walk-off and pump depletion are included in the complete mathematical model, avoiding any a priori-assumption. Finally, the design criteria to optimize the device performance are presented.
All-optical AND Gate based on Raman Effect in Silicon-on-Insulator Waveguide / Passaro, Vittorio; DE LEONARDIS, Francesco. - In: OPTICAL AND QUANTUM ELECTRONICS. - ISSN 0306-8919. - STAMPA. - 38:9-11(2006), pp. 877-888. [10.1007/s11082-006-9021-0]
All-optical AND Gate based on Raman Effect in Silicon-on-Insulator Waveguide
PASSARO, Vittorio;DE LEONARDIS, Francesco
2006-01-01
Abstract
An all-optical AND gate based on Raman effect in silicon-on-insulator technology is proposed. Stimulated Raman scattering, two photon absorption, free carrier dispersion, self and cross phase modulation induced by Kerr effect, walk-off and pump depletion are included in the complete mathematical model, avoiding any a priori-assumption. Finally, the design criteria to optimize the device performance are presented.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
