An all-optical AND gate based on Raman effect in silicon-on-insulator technology is proposed. Stimulated Raman scattering, two photon absorption, free carrier dispersion, self and cross phase modulation induced by Kerr effect, walk-off and pump depletion are included in the complete mathematical model, avoiding any a priori-assumption. Finally, the design criteria to optimize the device performance are presented.
|Titolo:||All-optical AND Gate based on Raman Effect in Silicon-on-Insulator Waveguide|
|Data di pubblicazione:||2006|
|Digital Object Identifier (DOI):||10.1007/s11082-006-9021-0|
|Appare nelle tipologie:||1.1 Articolo in rivista|