An all-optical AND gate based on Raman effect in silicon-on-insulator technology is proposed. Stimulated Raman scattering, two photon absorption, free carrier dispersion, self and cross phase modulation induced by Kerr effect, walk-off and pump depletion are included in the complete mathematical model, avoiding any a priori-assumption. Finally, the design criteria to optimize the device performance are presented.

All-optical AND Gate based on Raman Effect in Silicon-on-Insulator Waveguide / Passaro, Vittorio; DE LEONARDIS, Francesco. - In: OPTICAL AND QUANTUM ELECTRONICS. - ISSN 0306-8919. - STAMPA. - 38:9-11(2006), pp. 877-888. [10.1007/s11082-006-9021-0]

All-optical AND Gate based on Raman Effect in Silicon-on-Insulator Waveguide

PASSARO, Vittorio;DE LEONARDIS, Francesco
2006-01-01

Abstract

An all-optical AND gate based on Raman effect in silicon-on-insulator technology is proposed. Stimulated Raman scattering, two photon absorption, free carrier dispersion, self and cross phase modulation induced by Kerr effect, walk-off and pump depletion are included in the complete mathematical model, avoiding any a priori-assumption. Finally, the design criteria to optimize the device performance are presented.
2006
All-optical AND Gate based on Raman Effect in Silicon-on-Insulator Waveguide / Passaro, Vittorio; DE LEONARDIS, Francesco. - In: OPTICAL AND QUANTUM ELECTRONICS. - ISSN 0306-8919. - STAMPA. - 38:9-11(2006), pp. 877-888. [10.1007/s11082-006-9021-0]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/5239
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