In this paper appropriate alloys of germanium (Ge) and silicon (Si) have been investigated and applied in silicon-on-insulator (SOI) technology for homogeneous optical sensing at 2.883 m. Novel vertical slot waveguides have been analyzed, in particular their optimization in order to achieve ultra-high sensitivity as well as relaxed fabrication tolerances. These features have been compared with well-known silicon-based SOI slot waveguides working at 1.55 m for optical label-free homogeneous sensing.
High Performance Optical Sensing in Group IV Slot Optical Waveguides at 2.883 μm / Troia, Benedetto; Passaro, Vittorio; De Leonardis, Francesco. - STAMPA. - (2011), pp. 778-781. (Intervento presentato al convegno 19th Telecommunications Forum, TELFOR 2011 tenutosi a Belgrade, Serbia nel November 22-24, 2011) [10.1109/TELFOR.2011.6143660].
High Performance Optical Sensing in Group IV Slot Optical Waveguides at 2.883 μm
Vittorio Passaro;Francesco De Leonardis
2011-01-01
Abstract
In this paper appropriate alloys of germanium (Ge) and silicon (Si) have been investigated and applied in silicon-on-insulator (SOI) technology for homogeneous optical sensing at 2.883 m. Novel vertical slot waveguides have been analyzed, in particular their optimization in order to achieve ultra-high sensitivity as well as relaxed fabrication tolerances. These features have been compared with well-known silicon-based SOI slot waveguides working at 1.55 m for optical label-free homogeneous sensing.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
